Д. В. Нечаев
About
Д. В. Нечаев has authored 51 papers that have received a total of 368 indexed citations.
This includes 49 papers in Condensed Matter Physics, 33 papers in Electronic, Optical and Magnetic Materials and 23 papers in Materials Chemistry. The topics of these papers are GaN-based semiconductor devices and materials (49 papers), Ga2O3 and related materials (33 papers) and ZnO doping and properties (21 papers). Д. В. Нечаев is often cited by papers focused on GaN-based semiconductor devices and materials (49 papers), Ga2O3 and related materials (33 papers) and ZnO doping and properties (21 papers) and collaborates with scholars based in Russia, Sweden and Belarus. Д. В. Нечаев's co-authors include V. N. Jmerik, S. V. Ivanov, A. А. Ситникова, В. В. Ратников and T. V. Shubina and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics
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