D.L. Blackburn
About
D.L. Blackburn has authored 24 papers that have received a total of 503 indexed citations.
This includes 21 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. The topics of these papers are Silicon Carbide Semiconductor Technologies (9 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Semiconductor materials and devices (5 papers). D.L. Blackburn is often cited by papers focused on Silicon Carbide Semiconductor Technologies (9 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Semiconductor materials and devices (5 papers) and collaborates with scholars based in United States, China and Egypt. D.L. Blackburn's co-authors include D.W. Berning, K.F. Galloway, Yogendra Joshi, Allen R. Hefner and J.M. Benedetto and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Power Electronics
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