D.M. Hofmann
About
D.M. Hofmann has authored 74 papers that have received a total of 4.4k indexed citations.
This includes 53 papers in Materials Chemistry, 35 papers in Electrical and Electronic Engineering and 26 papers in Electronic, Optical and Magnetic Materials. The topics of these papers are ZnO doping and properties (41 papers), Ga2O3 and related materials (22 papers) and GaN-based semiconductor devices and materials (21 papers). D.M. Hofmann is often cited by papers focused on ZnO doping and properties (41 papers), Ga2O3 and related materials (22 papers) and GaN-based semiconductor devices and materials (21 papers) and collaborates with scholars based in Germany, Russia and Spain. D.M. Hofmann's co-authors include Bertrand Meyer, H. Alves, A. Hoffmann, A. Zeuner and D. Pfisterer and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics
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