H. Lahrèche
About
H. Lahrèche has authored 34 papers that have received a total of 953 indexed citations.
This includes 29 papers in Condensed Matter Physics, 23 papers in Electrical and Electronic Engineering and 14 papers in Electronic, Optical and Magnetic Materials. The topics of these papers are GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (14 papers) and Silicon Carbide Semiconductor Technologies (11 papers). H. Lahrèche is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (14 papers) and Silicon Carbide Semiconductor Technologies (11 papers) and collaborates with scholars based in France, United States and Poland. H. Lahrèche's co-authors include P. Gibart, B. Beaumont, P. Bove, P. Vennéguès and Christophe Gaquière and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society
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