V.E. Bougrov
About
V.E. Bougrov has authored 78 papers that have received a total of 644 indexed citations.
This includes 43 papers in Electrical and Electronic Engineering, 33 papers in Condensed Matter Physics and 28 papers in Materials Chemistry. The topics of these papers are GaN-based semiconductor devices and materials (33 papers), ZnO doping and properties (19 papers) and Ga2O3 and related materials (17 papers). V.E. Bougrov is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), ZnO doping and properties (19 papers) and Ga2O3 and related materials (17 papers) and collaborates with scholars based in Russia, Finland and United Kingdom. V.E. Bougrov's co-authors include M. A. Odnoblyudov, M. Sopanen, Sami Suihkonen, А. Е. Романов and Harri Lipsanen and has published in prestigious journals such as Journal of Applied Physics, Carbon and Scientific Reports
In The Last Decade
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